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| TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP140 Collector-base voltage (IE = 0) TIP141 TIP142 TIP140 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP141 TIP142 V EBO IC ICM IB Ptot Ptot 1/2LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = 30 mA (see Note 5) VCE = 30 V V CE = 40 V V CE = 50 V VCB = 60 V V CB = 80 V V CB = 100 V VEB = VCE = V CE = IB = IB = VCE = IE = 5V 4V 4V 10 mA 40 mA 4V 10 A IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 5 A IC = 10 A IC = 5 A IC = 10 A IC = 10 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 500 2 3 3 3.5 V V V TEST CONDITIONS TIP140 IB = 0 TIP141 TIP142 TIP140 TIP141 TIP142 TIP140 TIP141 TIP142 MIN 60 80 100 2 2 2 1 1 1 2 mA mA mA V TYP MAX UNIT ICEO ICBO IEBO hFE VCE(sat) VBE VEC NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 10 A V BE(off) = -4.2 V IB(on) = 40 mA RL = 3 MIN IB(off) = -40 mA tp = 20 s, dc 2% TYP 0.9 11 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 70000 TCS140AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 1*5 TCS140AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*0 1000 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 10 20 VCE = 4 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C 2*5 TC = 100C TCS140AC 2*0 1*5 1*0 0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 1*0 IC - Collector Current - A 10 20 0 0*5 Figure 3. PRODUCT INFORMATION 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS140AA IC - Collector Current - A 10 1*0 TIP140 TIP141 TIP142 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS140AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. PRODUCT INFORMATION 4 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 5 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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